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• AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED
1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2mA/°C from 25ºC to 150ºC 1.0mA/°C from 150ºC to 175ºC Forward Current: 650mA
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
VRM TYPE V(pk) CDLL, 1N5194UR CDLL, 1N5195UR CDLL, 1N5196UR 80 180 250 V(pk) 70 180 225 mA 200 200 200 VRWM IO IO TA = +150°C mA 50 50 50 I FSM TP=1/120 S TA=25ºC A 2 2 2
DIM D F G G1 S
MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.70 0.063 0.067 0.41 0.55 0.016 0.022 3.30 3.70 .130 .146 2.54 REF. .100 REF. 0.03 MIN. .001 MIN.
1N5194UR Datasheet
