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• AVAILABLE IN JAN, JANTX, AND JANTXV
PER MIL-PRF-19500/118
• GENERAL PURPOSE SILICON DIODES
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA/°C From 25°C to 150°C
1.0 mA/°C From 150°C to 175°C Forward Current: 650 mA
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
TYPE
1N5194 1N5195 1N5196
VRM
V RWM
V (pk)
80 180 250
V (pk)
70 180 225
I O I O I FSM
TA = 150°C TP = 1/120 s
TA = 25°C
mA mA
A
200 50 200 50 200 50
2 2 2
TYPE
1N5194 1N5195 1N5196
VF @100mA
I R1 at V RWM I R2 at V RM I R3 at V RWM
TA = 25°C
TA = 25°C
TA = 150°C
V dc
0.8 - 1.0 0.8 - 1.0 0.8 - 1.
1N5196 Datasheet
