Part number: 2N3108
Manufacturer: Comset Semiconductor
File Size: 137.18KB
Download: 📄 Datasheet
Description: NPN transistor
Compliance to RoHS.
B
E
ABSOLUTE MAXIMUM RATINGS Value 2N3108
60
www.DataSheet.net/
Symbol
VCEO VCBO VEBO IC PD TJ .
TAGS
📁 Related Datasheet
2N3107 - NPN SILICON EPITAXIAL TRANSISTOR
(Micro Electronics)
.
2N3107 - (2N3107 - 2N3110) NPN Silicon AF Medium Amplifiers and Switches
(Micro Electronics)
www..com
.
2N3107 - Small Signal Transistors
(Central)
Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICE.
2N3108 - Bipolar NPN Device
(Semelab Plc)
www..com
2N3108
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically seale.
2N3108 - NPN SILICON EPITAXIAL TRANSISTOR
(Micro Electronics)
www..com
.
2N3108 - Small Signal Transistors
(Central)
Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICE.
2N3109 - NPN SILICON EPITAXIAL TRANSISTOR
(Micro Electronics)
www..com
.
2N3109 - Small Signal Transistors
(Central)
Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICE.
2N3110 - NPN SILICON EPITAXIAL TRANSISTOR
(Micro Electronics)
www..com
.
2N3110 - Bipolar NPN Device
(Seme LAB)
www..com
2N3110
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically seale.