Part number:
2N3114CSM
Manufacturer:
Seme LAB
File Size:
42.77kb
Download:
Description:
Bipolar npn device.
2N3114CSM
Seme LAB
42.77kb
Bipolar npn device.
📁 Related Datasheet
2N3114CSM - SILICON PLANAR EPITAXIAL NPN TRANSISTOR
(TT)
SILICON PLANAR EPITAXIAL NPN TRANSISTOR
2N3114CSM
• High Voltage • Hermetic Ceramic Surface Mount Package • Designed For Low Noise General Purpose Am.
2N3114 - Amplifier Transistor
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2N3114 - Small Signal Transistors
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Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICE.
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2N3110 - NPN SILICON EPITAXIAL TRANSISTOR
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..
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2N3110 - Bipolar NPN Device
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..
2N3110
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically seale.
2N3110 - General Purpose Amplifier
(Comset Semiconductor)
NPN 2N3108 – 2N3110 GENERAL PURPOSE AMPLIFIERS AND SWITCHES
C
The 2N3108 and 2N3110 are NPN transistors mounted in TO-39 metal package. They are inte.
2N3110 - Small Signal Transistors
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Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICE.
2N3115 - NPN Transistor
(Motorola)
2N2958 (SILICON) 2N2959 2N3115 2N3116
NPN silicon annular Star transistors for high- speed switching and amplifier applications.
CASE 22
(TO·18)
2N.
2N3115 - Small Signal Transistors
(Central Semiconductor)
Small Signal Transistors TO-18 Case (Continued)
TYPE NO.
DESCRIPTION
BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V)
MIN MIN MIN MAX *ICES **ICEV.
