Datasheet4U.com - 2N3007

2N3007 Datasheet, device equivalent, Seme LAB

Page 1 of 2N3007

PDF File Details

Part number: 2N3007

Manufacturer: Seme LAB

File Size: 35.49KB

Download: 📄 Datasheet

Description: Bipolar NPNP Device

📥 Download PDF (35.49KB) Datasheet Preview: 2N3007

PDF File Details

Part number: 2N3007

Manufacturer: Seme LAB

File Size: 35.49KB

Download: 📄 Datasheet

Description: Bipolar NPNP Device

Image gallery

Page 1 of 2N3007

TAGS

2N3007
Bipolar
NPNP
Device
Seme LAB

📁 Related Datasheet

2N3001 - SILICON REVERSE BLOCKING THYRISTORS (Digitron Semiconductors)
2N3001-2N3004 High-reliability discrete products and engineering services since 1977 SILICON REVERSE BLOCKING THYRISTORS FEATURES • Available as “H.

2N3002 - SILICON REVERSE BLOCKING THYRISTORS (Digitron Semiconductors)
2N3001-2N3004 High-reliability discrete products and engineering services since 1977 SILICON REVERSE BLOCKING THYRISTORS FEATURES • Available as “H.

2N3003 - SILICON REVERSE BLOCKING THYRISTORS (Digitron Semiconductors)
2N3001-2N3004 High-reliability discrete products and engineering services since 1977 SILICON REVERSE BLOCKING THYRISTORS FEATURES • Available as “H.

2N3004 - SILICON REVERSE BLOCKING THYRISTORS (Digitron Semiconductors)
2N3001-2N3004 High-reliability discrete products and engineering services since 1977 SILICON REVERSE BLOCKING THYRISTORS FEATURES • Available as “H.

2N3009 - NPN SILICON HIGH SPEED SWITCHING TRANSISTORS (Central Semiconductor Corp)
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

2N3010 - NPN silicon low-power transistor (Motorola)
2N3010 (SILICON) CASE 22 (TO-18) NPN silicon low-power transistor primarily designed for high-speed, saturated switching applications. Collector co.

2N3011 - SILICON NPN TRANSISTOR (Central Semiconductor)
2N3011 SILICON NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN tr.

2N3012 - Bipolar PNP Device (Seme LAB)
Dimensions in mm (inches). m o .c U 4 t e e h S a at .D w w w 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 2N3012 Bipolar PNP Device in a He.

2N3012CSM - Bipolar PNP Device (Seme LAB)
Dimensions in mm (inches). 0.51 ± 0.10 (0.02 ± 0.004) 2.54 ± 0.13 (0.10 ± 0.005) m o .c U 4 t e e h S a at .D w w w 0.31 rad. (0.012) 2N3012CSM 3 .

2N3013 - NPN SILICON HIGH SPEED SWITCHING TRANSISTORS (Central Semiconductor Corp)
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts