Part number: 2N3010
Manufacturer: Motorola
File Size: 119.70KB
Download: 📄 Datasheet
Description: NPN silicon low-power transistor
Collector connected to case
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage*
VCEO *
Collector-Emitter Vol.
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Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209)
4.95 (0.195) 4.52 (0.178)
Bipolar NPN Device in a Hermetically sealed TO18
Metal Package.
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltaged)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous.
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(Seme LAB)
Dimensions in mm (inches).
m o .c U 4 t e e h S a at .D w w w
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2N3012
Bipolar PNP Device in a He.
2N3012 - Small Signal Transistors
(Central Semiconductor)
Small Signal Transistors TO-18 Case (Continued)
TYPE NO.
DESCRIPTION
BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V)
MIN MIN MIN MAX *ICES **ICEV.
2N3012 - SWITCHING TRANSISTOR
(Motorola)
2N3012
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
SWITCHING TRANSISTOR
PNP SILICON
Refer to 2N869A for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Vol.
2N3012CSM - Bipolar PNP Device
(Seme LAB)
Dimensions in mm (inches).
0.51 ± 0.10 (0.02 ± 0.004)
2.54 ± 0.13 (0.10 ± 0.005)
m o .c U 4 t e e h S a at .D w w w
0.31 rad. (0.012)
2N3012CSM
3
.
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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
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2N3014 - NPN SILICON HIGH SPEED SWITCHING TRANSISTORS
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.