2N3015 Datasheet - Motorola

2N3015 NPN Transistor

2N3013 2N3014 For Specifications, See 2N3009 Data. 2N3015 (SILICON) NPN silicon annular transistor designed for highspeed, medium-power saturated switching applications. CASE 31 (T0 5) Collector connected to case MAXI MUM RATI NGS ITA = 25°C unless otherwise noted) Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device DisSipation @ TA ~ 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C VCEO VCB VEB PD P.

2N3015-Motorola.pdf