2N3011 Datasheet, transistor equivalent, Central Semiconductor

PDF File Details

Part number: 2N3011

Manufacturer: Central Semiconductor (https://www.centralsemi.com/)

File Size: 338.88KB

Download: 📄 Datasheet

Description: SILICON NPN TRANSISTOR

Datasheet Preview: 2N3011 📥 Download PDF (338.88KB)

2N3011 Application

MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Coll.

2N3011 Description

The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter .

Image gallery

Page 2 of 2N3011 Page 3 of 2N3011

TAGS

2N3011
SILICON
NPN
TRANSISTOR
Central Semiconductor

📁 Related Datasheet

2N3010 - NPN silicon low-power transistor (Motorola)
2N3010 (SILICON) CASE 22 (TO-18) NPN silicon low-power transistor primarily designed for high-speed, saturated switching applications. Collector co.

2N3011 - Bipolar NPN Device (Seme LAB)
2N3011 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package.

2N3011 - SWITCHING TRANSISTOR (Motorola)
MAXIMUM RATINGS Rating Collector-Emitter Voltaged) Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous.

2N3012 - Bipolar PNP Device (Seme LAB)
Dimensions in mm (inches). m o .c U 4 t e e h S a at .D w w w 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 2N3012 Bipolar PNP Device in a He.

2N3012 - Small Signal Transistors (Central Semiconductor)
Small Signal Transistors TO-18 Case (Continued) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V) MIN MIN MIN MAX *ICES **ICEV.

2N3012 - SWITCHING TRANSISTOR (Motorola)
2N3012 CASE 22-03, STYLE 1 TO-18 (TO-206AA) SWITCHING TRANSISTOR PNP SILICON Refer to 2N869A for graphs. MAXIMUM RATINGS Rating Collector-Emitter Vol.

2N3012CSM - Bipolar PNP Device (Seme LAB)
Dimensions in mm (inches). 0.51 ± 0.10 (0.02 ± 0.004) 2.54 ± 0.13 (0.10 ± 0.005) m o .c U 4 t e e h S a at .D w w w 0.31 rad. (0.012) 2N3012CSM 3 .

2N3013 - NPN SILICON HIGH SPEED SWITCHING TRANSISTORS (Central Semiconductor Corp)
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

2N3013 - NPN SIlicon Small-Signal Transistor (Motorola)
.

2N3014 - NPN SILICON HIGH SPEED SWITCHING TRANSISTORS (Central Semiconductor Corp)
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts