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CSD1489 - NPN EPITAXIAL PLANAR SILICON TRANSISTOR

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Part number CSD1489
Manufacturer Continental Device India Limited
File Size 92.26 KB
Description NPN EPITAXIAL PLANAR SILICON TRANSISTOR
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Description

SYMBOL VALUE BVCBO 20 Collector -Base Voltage BVCEO 16 Collector Emitter Voltage BVEBO 6.0 Emitter Base Voltage IC 2.0 Collector Current PC 0.75 Collector Power Dissipation Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN BVCBO IC=10uA, IE=0 20 Collector -Base Voltage BVCEO IC=1mA, IB=0 16 Collector Emitter Voltage BVEBO IE=10uA, IC=0 6.0 Emitter Base Voltage ICBO VCB=16

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