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CFB1370 Datasheet - Continental Device

CFB1370 PNP Silicon Epitaxial Power Transistor

SYMBOL VALUE VCBO 60 Collector -Base Voltage VCEO 60 Collector -Emitter Voltage VEBO 5.0 Emitter- Base Voltage IC 3.0 Collector Current ICP 6.0 Peak PC 2.0 Power Dissipation @ Ta=25 deg C 30 Power Dissipation @ Tc=25 deg C Tj 150 Junction Temperature Tstg -55 to +150 Storage Temperature Range ELECTR.

CFB1370_ContinentalDevice.pdf

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Datasheet Details

Part number:

CFB1370

Manufacturer:

Continental Device

File Size:

40.79 KB

Description:

Pnp silicon epitaxial power transistor.

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CFB1370 CFB1370 PNP Silicon Epitaxial Power Transistor Continental Device

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