Datasheet Details
| Part number | CFB1370 |
|---|---|
| Manufacturer | Continental Device |
| File Size | 40.79 KB |
| Description | PNP Silicon Epitaxial Power Transistor |
| Datasheet |
 CFB1370_ContinentalDevice.pdf
|
| Part number | CFB1370 |
|---|---|
| Manufacturer | Continental Device |
| File Size | 40.79 KB |
| Description | PNP Silicon Epitaxial Power Transistor |
| Datasheet |
CFB1370_ContinentalDevice.pdf
|
SYMBOL VALUE VCBO 60 Collector -Base Voltage VCEO 60 Collector -Emitter Voltage VEBO 5.0 Emitter- Base Voltage IC 3.0 Collector Current ICP 6.0 Peak PC 2.0 Power Dissipation @ Ta=25 deg C 30 Power Dissipation @ Tc=25 deg C Tj 150 Junction Temperature Tstg -55 to +150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP VCEO IC=1mA, IB=0 60 Collector Emitter Voltage VCBO IC=50uA, IE=0 60 Collector Base Voltage VEBO IE=50uA,I
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