CGT65R032T1 Datasheet - CoolSemi

CGT65R032T1 - E-mode 650V GaN HEMT

TOLL GaN-on-Silcon E-mode Transistor Type/Ordering Code Package CGT65R032T1 TOLL E-mode 650V, 25mΩ typ., GaN HEMT T1 in TOLL Datasheet - production data Key Performance Parameters Parameters Value Unit BVDSS 650 V RDS(on),max 32 mΩ Qg,typ 14 nC IDS,max 60 A IDS,pulse 120 A F

CGT65R032T1 Features

* 650 V enhancement mode power transistor

* Ultra-low FOM

* Simple gate drive requirements (0 V to 6 V)

* Transient tolerant gate drive (-20 / +10 V)

* Very high switching frequency (> 10 MHz)

* Fast and controllable fall and rise times

* Reve

CGT65R032T1-CoolSemi.pdf