* Package
* New C3MTM SiC MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
C3M0065100K Datasheet (968.41 KB)
C3M0065100K
Cree
968.41 KB
Silicon carbide power mosfet.
VDS 1000 V C3M0065100K ID @ 25˚C 32 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode .
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