CRF24010 Datasheet (Cree) - SiC RF Power MESFET

CRF24010, SiC RF Power MESFET

PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide (SiC) RF power MetalSemiconductor Field-Effect Transistor (MESFET).

SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

SiC MESFETs offer greater efficiency, greater power www.DataSheet4U.com density, and wider bandwidths compared to Si and GaAs transistors.

Package Type s:

CRF24010 Features

* 15 dB Small Signal Gain High Efficiency 10 W minimum P1dB Up to 2700 MHz Operation 48 V Operation High Breakdown Voltage High Temperature Operation APPLICATIONS

* Wideband