CRF24060 Datasheet (Cree) - SiC RF Power MESFET

CRF24060, SiC RF Power MESFET

PRELIMINARY CRF24060 60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide (SiC) RF power MetalSemiconductor Field-Effect Transistor (MESFET).

SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

SiC MESFETs offer greater efficiency, greater power www.DataSheet4U.com density, and wider bandwidths compared to Si and GaAs transistors.

Package Type : 4

CRF24060 Features

* 13 dB Small Signal Gain High Efficiency 50 W minimum P1dB Up to 2400 MHz Operation 48 V Operation High Breakdown Voltage High Temperature Operation APPLICATIONS

* Wideband