CY7S1061G - 16-Mbit (1 M words x 16 bit) Static RAM

Cypress Semiconductor

Datasheet Details

Part number	CY7S1061G
Manufacturer	Cypress Semiconductor
File Size	900.77 KB
Description	16-Mbit (1 M words x 16 bit) Static RAM
Datasheet	CY7S1061G-CypressSemiconductor.pdf

The CY7S1061G/CY7S1061GE is a high-performance CMOS fast static RAM organized as 1,048,576 words by 16 bits.

High speed.
tAA = 10 ns.
Ultra-low power PowerSnooze™[1] device.
Deep Sleep (DS) current IDS = 22-µA maximum.
Low active and standby currents.
ICC = 90-mA typical.
ISB2 = 20-mA typical.
Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V.
Embedded error-correcting code (ECC) for single-bit error correction.
1.0-V data retention.
Transistor-transistor logic (TTL) compatible inputs and outputs.
Error indicat.

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Published: Mar 14, 2017 |