CY7S1061GE Datasheet - Cypress Semiconductor

CY7S1061GE 16-Mbit (1 M words x 16 bit) Static RAM

CY7S1061GE Features

* High speed

* tAA = 10 ns

* Ultra-low power PowerSnooze™[1] device

* Deep Sleep (DS) current IDS = 22-µA maximum

* Low active and standby currents

* ICC = 90-mA typical

* ISB2 = 20-mA typical

* Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V

Datasheet Details

CY7S1061GE

Cypress Semiconductor

900.77 KB

16-mbit (1 m words x 16 bit) static ram.

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