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S27KS0641, S27KL0641 Datasheet - Cypress Semiconductor

S27KS0641 - Self-Refresh DRAM

5 2.

Product Overview 8 3.

Signal Descriptions 9 3.1 Input/Output Summary 9 3.2 Command/Address Bit Assignments 10 3.3 Read Transactions 14 3.4 Write Transactions with Initial Latency (Memory Core Write) 15 3.5 Write Transactions without Initial Latency (Register Write) 17 4.

Memory Space 18 5.

Not Recommended for New Designs (NRND) S27KL0641/S27KS0641 S70KL1281/S70KS1281 3.0 V/1.8 V, 64 Mb (8 MB)/128 Mb (16 MB), HyperRAMâ„¢ Self-Refresh DRAM 3.0 V/1.8 V, 64 Mb (8 MB)/128 Mb (16 MB), HyperRAMâ„¢ Self-Refresh DRAM Distinctive Characteristics HyperRAMâ„¢ Low Signal Count Interface 3.0 V I/O, 11 bus signals Single ended clock (CK) 1.8 V I/O, 12 bus signals Differential clock (CK, CK#) Chip Select (CS#) 8-bit data bus (DQ[7:0]) Read-Write Data Strobe (

S27KL0641-CypressSemiconductor.pdf

This datasheet PDF includes multiple part numbers: S27KS0641, S27KL0641. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

S27KS0641, S27KL0641

Manufacturer:

Cypress Semiconductor

File Size:

1.80 MB

Description:

Self-refresh dram.

Note:

This datasheet PDF includes multiple part numbers: S27KS0641, S27KL0641.
Please refer to the document for exact specifications by model.

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