S29JL064J Datasheet - Cypress Semiconductor

S29JL064J - Simultaneous Read/Write Flash

The S29JL064J is a 64 Mbit, 3.0 volt-only flash memory device, organized as 4,194,304 words of 16 bits each or 8,388,608 bytes of 8 bits each.

Word mode data appears on DQ15 *DQ0; byte mode data appears on DQ7 *DQ0.

The device is designed to be programmed in-system with the standard 3

S29JL064J Distinctive Characteristics 64-Mbit (8M × 8-Bit/4M × 16-Bit), 3 V, Simultaneous Read/Write Flash Architectural Advantages Simultaneous Read/Write operations Data can be continuously read from one bank while executing erase/program functions in another bank Zero latency between read and write operations Flexible bank architecture Read may occur in any of the three banks not being programmed or erased Four banks may be grouped by cus

S29JL064J Features

* Supports Common Flash Memory Interface (CFI)

* Erase suspend/erase resume

* Suspends erase operations to read data from, or program data to, a sector that is not being erased, then resumes the erase operation

* Data# polling and toggle bits

* Provides a software method

S29JL064J-CypressSemiconductor.pdf