* Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A
* Excellent DC current gain characteristics
* Complementary to BTD2118J3 Symbol BTB1412J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Vol
BTB1412J3 Datasheet (212.77 KB)
BTB1412J3
Cystech Electonics
212.77 KB
Low vcesat pnp epitaxial planar transistor.
www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2004.07.02 Page No. : 1/4 Low Vcesat PNP E.
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