BTB1412J3 Low Vcesat PNP Epitaxial Planar Transistor

Cystech Electonics

Description

www.DataSheet4U.com CYStech Electronics Corp.Spec.No.: C816J3 Issued Date : 2003.05.15 Revised Date : 2004.07.02 Page No.: 1/4 Low Vcesat PNP E.

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Datasheet Specifications

Part number: BTB1412J3
Manufacturer: Cystech Electonics
File Size: 212.77 KB
Datasheet: BTB1412J3_CystechElectonics.pdf
Description: Low Vcesat PNP Epitaxial Planar Transistor

Features

* Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A
* Excellent DC current gain characteristics
* Complementary to BTD2118J3 Symbol BTB1412J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Vol

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1412J3 CYStek Product Specification

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BTB1412J3 Low Vcesat PNP Epitaxial Planar Transistor Cystech Electonics

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