BTB1426A3 Low VCE(SAT) PNP Epitaxial Planar Transistor

Cystech Electonics

Description

www.DataSheet4U.com CYStech Electronics Corp.Spec.No.: C816A3-H Issued Date : 2003.07.02 Revised Date : Page No.: 1/4 Low VCE(SAT) PNP Epitaxia.
The BTB1426A3 is designed especially for use in strobo flash and medium power amplifier applications. High DC current gain and excellent hFE.

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Datasheet Specifications

Part number: BTB1426A3
Manufacturer: Cystech Electonics
File Size: 185.59 KB
Datasheet: BTB1426A3_CystechElectonics.pdf
Description: Low VCE(SAT) PNP Epitaxial Planar Transistor

Features

* Symbol BTB1426A3 Outline TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Power Dissipation Thermal Resistance, Junction to Ambient Ju

Applications

* High DC current gain and excellent hFE linearity.

BTB1426A3 Distributors

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BTB1426A3 Low VCESAT PNP Epitaxial Planar Transistor Cystech Electonics

Cystech Electonics BTB1426A3-like datasheet