* Low on-resistance
* Excellent thermal and electrical capabilities
* Pb-free lead plating and halogen-free package RDSON@VGS=-2.5V, ID=-3A RDSON@VGS=-1.8V, ID=-3A -20V -14.2A -5.2A 33.4mΩ(typ.) 46.4mΩ(typ.) 71.4mΩ(typ.) Equivalent Circuit MTA050P02DFJ6 Outline DFNWB2×2-
MTA050P02DFJ6 Datasheet (418.02 KB)
MTA050P02DFJ6
Cystech Electonics
418.02 KB
P-channel enhancement mode mosfet.
CYStech Electronics Corp. Spec. No. : C394DFJ6 Issued Date : 2015.09.03 Revised Date : Page No. : 1/9 -20V P-Channel Enhancement Mode MOSFET MTA050P.
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