MTA050P02DFJ6 - P-Channel Enhancement Mode MOSFET
MTA050P02DFJ6 Features
* Low on-resistance
* Excellent thermal and electrical capabilities
* Pb-free lead plating and halogen-free package RDSON@VGS=-2.5V, ID=-3A RDSON@VGS=-1.8V, ID=-3A -20V -14.2A -5.2A 33.4mΩ(typ.) 46.4mΩ(typ.) 71.4mΩ(typ.) Equivalent Circuit MTA050P02DFJ6 Outline DFNWB2×2-
