MTB20A04DH8 Dual N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C978H8 Issued Date : 2017.01.19 Revised Date : 2017.02.10 Page No.: 1/ 11 Dual N-Channel Enhancement Mode Pow.

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Datasheet Specifications

Part number: MTB20A04DH8
Manufacturer: Cystech Electonics
File Size: 646.60 KB
Datasheet: MTB20A04DH8-CystechElectonics.pdf
Description: Dual N-Channel Enhancement Mode Power MOSFET

Features

* ID@VGS=10V, TA=70°C
* Low On Resistance RDS(ON)@VGS=10V, ID=8A
* Simple Drive Requirement
* Low Gate Charge RDS(ON)@VGS=4.5V, ID=4A
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package 40V 18.5A 11.7A 5.6A 4.5A 16.4mΩ(typ) 18

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MTB20A04DH8 Dual N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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