* ID@VGS=10V, TA=70°C
* Low On Resistance RDS(ON)@VGS=10V, ID=8A
* Simple Drive Requirement
* Low Gate Charge RDS(ON)@VGS=4.5V, ID=4A
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package 40V 18.5A 11.7A 5.6A 4.5A 16.4mΩ(typ) 18
MTB20A04DH8 Datasheet (646.60 KB)
MTB20A04DH8
Cystech Electonics
646.60 KB
Dual n-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C978H8 Issued Date : 2017.01.19 Revised Date : 2017.02.10 Page No. : 1/ 11 Dual N-Channel Enhancement Mode Pow.
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