MTB20A04DH8 Datasheet - Cystech Electonics

MTB20A04DH8 Dual N-Channel Enhancement Mode Power MOSFET

MTB20A04DH8 Features

* ID@VGS=10V, TA=70°C

* Low On Resistance RDS(ON)@VGS=10V, ID=8A

* Simple Drive Requirement

* Low Gate Charge RDS(ON)@VGS=4.5V, ID=4A

* Fast Switching Characteristic

* Pb-free lead plating and Halogen-free package 40V 18.5A 11.7A 5.6A 4.5A 16.4mΩ(typ) 18

Datasheet Details

MTB20A04DH8

Cystech Electonics

646.60 KB

Dual n-channel enhancement mode power mosfet.

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