* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* ESD Protected
* Pb-free & Halogen-free package BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=6A RDS(ON)@VGS=4.5V, ID=6A 60V 6.3A 5.0A 17 mΩ(typ) 20 mΩ(typ)
MTB20A06KQ8 Datasheet (396.13 KB)
MTB20A06KQ8
Cystech Electonics
396.13 KB
Dual n-channel enhancement mode power mosfet.
CYStech Electronics Corp. Dual N-Channel Enhancement Mode Power MOSFET MTB20A06KQ8 Spec. No. : C103Q8 Issued Date : 2016.05.19 Revised Date : 2016.05.
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