DMHT10H032LFJ 100V N-CHANNEL MOSFET

DIODES

Description

DMHT10H032LFJ 100V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary BVDSS 100V RDS(ON) MAX 33mΩ @ VGS = 10V 50mΩ @ VGS = 4.5V ID MAX TA .
This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. Thermally Efficient Packa.

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Datasheet Specifications

Part number: DMHT10H032LFJ
Manufacturer: DIODES ↗
File Size: 495.98 KB
Datasheet: DMHT10H032LFJ-DIODES.pdf
Description: 100V N-CHANNEL MOSFET

Features

* low on-resistance achievable with low gate drive. Features
* Thermally Efficient Package

Applications

* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On-State Losses
* Low Input Capacitance
* Fast Switching Speed
* 100% Unclamped Inductive Switching (UIS) Test in Production
* Ensures More Reliable and Robust End Application
* Totally Lead-Free & Fully R

DMHT10H032LFJ Distributors

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DMHT10H032LFJ 100V N-CHANNEL MOSFET DIODES

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