* low on-resistance achievable with low gate drive. Features
* Thermally Efficient Package
* Cooler Running Applications
* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On-State Losses
* Low Input Capacitance
* Fast Switching Speed
* 100% Unclamped Induc
DMHT10H032LFJ Datasheet (495.98 KB)
DMHT10H032LFJ
495.98 KB
100v n-channel mosfet.
DMHT10H032LFJ
100V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
BVDSS 100V
RDS(ON) MAX
33mΩ @ VGS = 10V 50mΩ @ VGS = 4.5V
ID MAX TA .
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60V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
BVDSS 60V
RDS(ON)
22mΩ @ VGS = 10V 30mΩ @ VGS = 4.5V
ID TA = +25°C
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This information may be changed without prior notice.
Specification No. JECXDE-9033B
Product Specification
Issued Date: July 27, 2017
Part Descript.
DMHC10H170SFJ - 100V MOSFET
(Diodes)
ADVANCEADDIVNAFNOCREM IANTIFOONRMATION
DMHC10H170SFJ
100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Features
Device BVDSS Q1 .
DMHC3025LSD - 30V MOSFET
(Diodes)
.
DMHC3025LSDQ - 30V MOSFET
(Diodes)
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DMHC4035LSD - 40V MOSFET
(Diodes)
ADVNAENWCEP IRNNOEFDWOURPCRMTOADTIUOCNT
DMHC4035LSD
40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Device N-Channel P-Channel
.
DMHC4035LSDQ - 40V MOSFET
(Diodes)
ADVNAENWCEP IRNNOEFDWOURPCRMTOADTIUOCNT
DMHC4035LSDQ
40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Device N-Channel P-Channel
.
