DMHT10H032LFJ Datasheet, Mosfet, DIODES

DMHT10H032LFJ Features

  • Mosfet low on-resistance achievable with low gate drive. Features
  • Thermally Efficient Package
      – Cooler Running Applications
  • High Conversion Efficiency

PDF File Details

Part number:

DMHT10H032LFJ

Manufacturer:

DIODES ↗

File Size:

495.98kb

Download:

📄 Datasheet

Description:

100v n-channel mosfet. This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. Features Ther

Datasheet Preview: DMHT10H032LFJ 📥 Download PDF (495.98kb)
Page 2 of DMHT10H032LFJ Page 3 of DMHT10H032LFJ

DMHT10H032LFJ Application

  • Applications
  • High Conversion Efficiency
  • Low RDS(ON)
      – Minimizes On-State Losses
  • Low Input Capacitance

TAGS

DMHT10H032LFJ
100V
N-CHANNEL
MOSFET
DIODES

📁 Related Datasheet

DMHT6016LFJ - 60V N-CHANNEL MOSFET (DIODES)
DMHT6016LFJ 60V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary BVDSS 60V RDS(ON) 22mΩ @ VGS = 10V 30mΩ @ VGS = 4.5V ID TA = +25°C 10.6.

DMH - ELECTRIC DOUBLE LAYER CAPACITORS (Rubycon)
DMH SERIES ELECTRIC DOUBLE LAYER CAPACITORS NEW DMH .

DMHA14R5V353M4ATA0 - Supercapacitor (muRata)
This information may be changed without prior notice. Specification No. JECXDE-9033B Product Specification Issued Date: July 27, 2017 Part Descript.

DMHC10H170SFJ - 100V MOSFET (Diodes)
ADVANCEADDIVNAFNOCREM IANTIFOONRMATION DMHC10H170SFJ 100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features Device BVDSS Q1 .

DMHC3025LSD - 30V MOSFET (Diodes)
.

DMHC3025LSDQ - 30V MOSFET (Diodes)
.

DMHC4035LSD - 40V MOSFET (Diodes)
ADVNAENWCEP IRNNOEFDWOURPCRMTOADTIUOCNT DMHC4035LSD 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Device N-Channel P-Channel .

DMHC4035LSDQ - 40V MOSFET (Diodes)
ADVNAENWCEP IRNNOEFDWOURPCRMTOADTIUOCNT DMHC4035LSDQ 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Device N-Channel P-Channel .

DMHC6070LSD - 60V MOSFET (Diodes)
ADVANCE INNEFWORPRMOADTIUOCNT DMHC6070LSD 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Device N-Channel P-Channel V(BR)DSS 6.

DM-106B - Magnetoresistance Element (Sony Corporation)
DM-106B Magnetoresistance Element For the availability of this product, please contact the sales office. Description The DM-106B is a highly sensitive.

Stock and price

Diodes Incorporated
MOSFET 4N-CH 100V 6A 12VDFN
DigiKey
DMHT10H032LFJ-13
0 In Stock
Qty : 6000 units
Unit Price : $0.43
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts