DMHC10H170SFJ Datasheet - Diodes

100V MOSFET

DMHC10H170SFJ Features

* Device BVDSS Q1 & Q4 100V Q2 & Q3 -100V RDS(ON) MAX 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V 250mΩ @ VGS = -10V 300mΩ @ VGS = -4.5V ID TA = +25°C 2.9A 2.6A -2.3A -2.1A

* Low On-Resistance

* Low Input Capacitance

* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

* Halogen and A

DMHC10H170SFJ General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications * Case: V-DFN5045-12 * Case Material: Molded Plastic, “Green” Molding Compoun.

DMHC10H170SFJ Datasheet (492.95 KB)