DMHC10H170SFJ 100V MOSFET

Diodes

Description

ADVANCEADDIVNAFNOCREM IANTIFOONRMATION DMHC10H170SFJ 100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary .
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal.

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Datasheet Specifications

Part number: DMHC10H170SFJ
Manufacturer: DIODES ↗
File Size: 492.95 KB
Datasheet: DMHC10H170SFJ-Diodes.pdf
Description: 100V MOSFET

Features

* Device BVDSS Q1 & Q4 100V Q2 & Q3 -100V RDS(ON) MAX 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V 250mΩ @ VGS = -10V 300mΩ @ VGS = -4.5V ID TA = +25°C 2.9A 2.6A -2.3A -2.1A
* Low On-Resistance
* Low Input Capacitance
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and A

Applications

* Applications
* Case: V-DFN5045-12
* Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
* Moisture Sensitivity: Level 1 per J-STD-020
* Terminal Connections: See Diagram
* T

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DMHC10H170SFJ 100V MOSFET Diodes

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