* 100% Unclamped Inductive Switching (UIS) Test in Production
* Ensures More Reliable and Robust End Application
* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On-State Losses
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* Tot
DMT67M8LSS Datasheet (455.09 KB)
DMT67M8LSS
455.09 KB
60v n-channel mosfet.
DMT67M8LSS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max
6.6mΩ @ VGS = 10V 8.4mΩ @ VGS = 4.5V
ID Max TA = +25°C
14.8.
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