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DMTH10H010SPS 100V N-CHANNEL MOSFET

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Description

Product Summary BVDSS 100V RDS(ON) Max 8.8mΩ @ VGS = 10V 11.5mΩ @ VGS = 6V ID TC = +25°C 123A 108A Green DMTH10H010SPS 100V 175°C N-CHANNEL ENHA.
Mechanical Data This new generation N-Channel Enhancement Mode MOSFET is. Case: PowerDI®5060-8 designed to minimize RDS(ON), yet maintain supe.

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Features

* Rated to +175°C
* Ideal for High Ambient Temperature Environments
* 100% Unclamped Inductive Switching

Applications

* Motor Control
* DC-DC Converters
* Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3
* Weight: 0.097 grams (Approximate)
* Power Management PowerDI5060-8 D S D Pin1 S D Top View Bottom View G S Internal Schematic

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