* Rated to +175°C
* Ideal for High Ambient Temperature Environments
* 100% Unclamped Inductive Switching
* Ensures more reliable and robust end application
* Low RDS(ON)
* Minimizes On-State Losses
* Fast Switching Speed
* Lead-Free Finish; RoHS Compliant
DMTH10H010SPS Datasheet (522.49 KB)
DMTH10H010SPS
522.49 KB
100v n-channel mosfet.
Product Summary
BVDSS 100V
RDS(ON) Max 8.8mΩ @ VGS = 10V 11.5mΩ @ VGS = 6V
ID TC = +25°C
123A
108A
Green
DMTH10H010SPS
100V 175°C N-CHANNEL ENHA.
📁 Related Datasheet
DMTH10H010SCT - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
DMTH10H010SCT
FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Sourc.
DMTH10H010SCT - N-CHANNEL MOSFET
(DIODES)
Green
DMTH10H010SCT
100V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) 9.5mΩ @VGS = 10V
Package TO220AB
ID TC = +.
DMTH10H010LCT - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
DMTH10H010LCT
FEATURES ·Drain Current –ID= 108A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Sourc.
DMTH10H010LCT - N-CHANNEL MOSFET
(Diodes)
DMTH10H010LCT
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) 9.5mΩ @VGS = 10V
Package TO220AB
ID TC = +25°C
108A.
DMTH10H010LPS - 100V N-CHANNEL MOSFET
(DIODES)
Green
DMTH10H010LPS
100V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
Features
BVDSS 100V
RDS(ON) Max 8.6mΩ @ VGS = 10.
DMTH10H015LK3 - N-CHANNEL MOSFET
(Diodes)
Green
DMTH10H015LK3
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max 15mΩ @ VGS = 10V 18mΩ @ VGS = 6.0V 25mΩ @.
DMTH10H015LPS - 100V N-CHANNEL MOSFET
(Diodes)
ADVANCED INFORMATION
Green
DMTH10H015LPS
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI
Product Summary
BVDSS 100V
RDS(ON) Max 16mΩ @ VGS .
DMTH10H015SK3 - 100V N-CHANNEL MOSFET
(DIODES)
DMTH10H015SK3
Green
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max 14mΩ @ VGS = 10V 20mΩ @ VGS = 6V
ID Max TC.
