DMTH12H007SPSW 120V N-CHANNEL MOSFET

DIODES

Description

DMTH12H007SPSW 120V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 120V RDS(ON) Max 8.9mΩ @ VGS = 10V 16mΩ @ VGS = 6V .
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal fo.

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Datasheet Specifications

Part number: DMTH12H007SPSW
Manufacturer: DIODES ↗
File Size: 581.12 KB
Datasheet: DMTH12H007SPSW-DIODES.pdf
Description: 120V N-CHANNEL MOSFET

Features

* Rated to +175°C
* Ideal for High Ambient Temperature Environments
* 100% Unclamped Inductive Switching (UIS) Test in Production

Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Switching

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DMTH12H007SPSW 120V N-CHANNEL MOSFET DIODES

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