
Part number:
DMTH8008SPS
Manufacturer:
File Size:
387.25kb
Download:
Description:
80v n-channel mosfet. and Applications This new generation MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device
DMTH8008SPS
387.25kb
80v n-channel mosfet. and Applications This new generation MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device
📁 Related Datasheet
DMTH8008SPSQ - 80V N-Channel MOSFET
(DIODES)
Green
DMTH8008SPSQ
80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
BVDSS 80V
RDS(ON) 7.8mΩ @ VGS = 10V
ID TC = +25°C
9.
DMTH8008SPSW - N-CHANNEL ENHANCEMENT MODE MOSFET
(DIODES)
DMTH8008SPSW
Green
80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
BVDSS 80V
RDS(ON) 7.8mΩ @ VGS = 10V
ID TC = +25°C
92.
DMTH8008SFG - 80V N-CHANNEL MOSFET
(DIODES)
.
DMTH8008SFGQ - 80V N-CHANNEL MOSFET
(DIODES)
DMTH8008SFGQ
Green
80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
BVDSS 80V
RDS(ON) Max 7mΩ @ VGS = 10V 10.5mΩ.
DMTH8008LFG - 80V N-CHANNEL MOSFET
(DIODES)
DMTH8008LFG
Green
80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 80V
RDS(ON) Max 6.9mΩ @ VGS = 10V 10.4mΩ @ VGS = 4.5V
ID Max .
DMTH8008LFGQ - 80V N-CHANNEL MOSFET
(DIODES)
DMTH8008LFGQ
80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 80V
RDS(ON) Max 6.9mΩ @ VGS = 10V 10.4mΩ @ VGS = 4.5V
ID Max TC = .
DMTH8008LPSQ - 80V N-Channel MOSFET
(DIODES)
DMTH8008LPSQ
Green
80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
BVDSS 80V
RDS(ON) MAX 7.8mΩ @ VGS = 10V 11mΩ @ VGS = .
DMTH8008LPSW - N-CHANNEL ENHANCEMENT MODE MOSFET
(DIODES)
DMTH8008LPSW
Green
80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
BVDSS 80V
RDS(ON) 7.8mΩ @ VGS = 10V 11mΩ @ VGS = 4.5V.
DMTH8001STLW - 80V N-CHANNEL MOSFET
(DIODES)
.
DMTH8001STLWQ - 80V N-CHANNEL MOSFET
(DIODES)
ADVANCED INFORMATION
Product Summary
BVDSS 80V
RDS(ON) Max 1.7mΩ @ VGS = 10V
DMTH8001STLWQ
Green
80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWER.