DXTN10060DFJBWQ 60V NPN TRANSISTOR

DIODES

Description

DXTN10060DFJBWQ 60V NPN LOW SATURATION TRANSISTOR .
Advanced process capability has been used to maximise the performance of this 60V, NPN transistor.

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Datasheet Specifications

Part number: DXTN10060DFJBWQ
Manufacturer: DIODES ↗
File Size: 435.93 KB
Datasheet: DXTN10060DFJBWQ-DIODES.pdf
Description: 60V NPN TRANSISTOR

Features

* BVCEO > 60V
* IC = 4A Continuous Collector Current
* Low Saturation Voltage (100mV Max @1A)
* RSAT = 60mΩ for a Low Equivalent On-Resistance
* hFE Specified up to 6A for High Current Gain Hold Up
* Tighter Gain Specification
* Low Profile 0.62mm High Package for Thin Ap

DXTN10060DFJBWQ Distributors

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DXTN10060DFJBWQ 60V NPN TRANSISTOR DIODES

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