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DS1258AB - 128k x 16 Nonvolatile SRAM

Description

A0 to A16 DQ0 to DQ15 CEU CEL WE OE VCC GND - Address Inputs - Data In/Data Out - Chip Enable Upper Byte - Chip Enable Lower Byte - Write Enable - Output Enable - Power (+5V) - Ground DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 13

Features

  • 10-Year Minimum Data Retention in the Absence of External Power Data is Automatically Protected During a Power Loss Separate Upper Byte and Lower Byte ChipSelect Inputs Unlimited Write Cycles Low-Power CMOS Read and Write Access Times as Fast as 70ns Lithium Energy Source is Electrically Disconnected to Retain Freshness Until Power is Applied for the First Time Full ±10% Operating Range (DS1258Y) Optional ±5% Operating Range (DS1258AB).

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Datasheet preview – DS1258AB

Datasheet Details

Part number DS1258AB
Manufacturer Dallas Semiconducotr
File Size 366.12 KB
Description 128k x 16 Nonvolatile SRAM
Datasheet download datasheet DS1258AB Datasheet
Additional preview pages of the DS1258AB datasheet.

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Other Datasheets by Dallas Semiconducotr
  • DS1258W - 3.3V 128k x 16 Nonvolatile
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www.DataSheet4U.com DS1258Y/AB 128k x 16 Nonvolatile SRAM www.maxim-ic.
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