Datasheet4U Logo Datasheet4U.com

DS1230W - 3.3V 256k Nonvolatile SRAM

Datasheet Summary

Description

A0 - A14 DQ0 - DQ7 CE WE OE VCC GND NC - Address Inputs - Data In/Data Out - Chip Enable - Write Enable - Output Enable - Power (+3.3V) - Ground - No Connect 1 of 11 111899 DS1230W DESCRIPTION The DS1230W 3.3V 256k Nonvolatile SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as

Features

  • 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 150 ns Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time Optional industrial temperature range of -40°C to +85°C, designated IND JEDEC standard 28-pin DIP package New PowerCap Module (.

📥 Download Datasheet

Datasheet preview – DS1230W

Datasheet Details

Part number DS1230W
Manufacturer Dallas
File Size 214.25 KB
Description 3.3V 256k Nonvolatile SRAM
Datasheet download datasheet DS1230W Datasheet
Additional preview pages of the DS1230W datasheet.

📁 Similar Datasheet

  • DS1232 - Micro-Monitor (HTC)
  • DS1232D - Micro-Monitor (HTC)
  • DS1232N - Micro-Monitor (HTC)
  • DS1200 - Serial RAM (Dallas Semiconducotr)
  • DS1200-3 - AC-DC / Distributed Power Front-End 1U (Emerson)
  • DS1200-3-002 - AC-DC / Distributed Power Front-End 1U (Emerson)
  • DS1200-3-005 - AC-DC / Distributed Power Front-End 1U (Emerson)
  • DS120002D2 - SiC Schottky Barrier Diode (Sanan)
  • DS120002D3 - SiC Schottky Barrier Diode (Sanan)
  • DS120005D3 - SiC Schottky Barrier Diode (Sanan)
Other Datasheets by Dallas

Full PDF Text Transcription

Click to expand full text
DS1230W 3.3V 256k Nonvolatile SRAM www.dalsemi.
Published: |