DS1230W Datasheet - Dallas

DS1230W 3.3V 256k Nonvolatile SRAM

A0 - A14 DQ0 - DQ7 CE WE OE VCC GND NC - Address Inputs - Data In/Data Out - Chip Enable - Write Enable - Output Enable - Power (+3.3V) - Ground - No Connect 1 of 11 111899 DS1230W DESCRIPTION The DS1230W 3.3V 256k Nonvolatile SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as .

DS1230W Features

* 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 150 ns Lithium energy source is electrically di

DS1230W_Dallas.pdf