Datasheet4U Logo Datasheet4U.com

DS1230Y - 256k Nonvolatile SRAM

This page provides the datasheet information for the DS1230Y, a member of the DS1230AB 256k Nonvolatile SRAM family.

Datasheet Summary

Features

  • 10 years minimum data retention in the absence of external power.
  • Data is automatically protected during power loss.
  • Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory.
  • Unlimited write cycles.
  • Low-power CMOS.
  • Read and write access times of 70 ns.
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time.
  • Full ±10% VCC operating range (DS1230Y).
  • Optional ±5% VCC operating range (DS1230AB.

📥 Download Datasheet

Datasheet preview – DS1230Y

Datasheet Details

Part number DS1230Y
Manufacturer Dallas
File Size 195.78 KB
Description 256k Nonvolatile SRAM
Datasheet download datasheet DS1230Y Datasheet
Additional preview pages of the DS1230Y datasheet.

📁 Similar Datasheet

  • DS1232 - Micro-Monitor (HTC)
  • DS1232D - Micro-Monitor (HTC)
  • DS1232N - Micro-Monitor (HTC)
  • DS1200 - Serial RAM (Dallas Semiconducotr)
  • DS1200-3 - AC-DC / Distributed Power Front-End 1U (Emerson)
  • DS1200-3-002 - AC-DC / Distributed Power Front-End 1U (Emerson)
  • DS1200-3-005 - AC-DC / Distributed Power Front-End 1U (Emerson)
  • DS120002D2 - SiC Schottky Barrier Diode (Sanan)
  • DS120002D3 - SiC Schottky Barrier Diode (Sanan)
  • DS120005D3 - SiC Schottky Barrier Diode (Sanan)
Other Datasheets by Dallas

Full PDF Text Transcription

Click to expand full text
19-5635; Rev 11/10 www.maxim-ic.
Published: |