DP170N03 Datasheet - Developer Microelectronics

DP170N03 N-Channel MOSFET

DP170N03 Single N Channel Enhancement Power MOSFET Product Summary DP170N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge with a 20V gate rating. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=20V) RDS(ON) (at VGS = 10V) RDS.

DP170N03-DeveloperMicroelectronics.pdf

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Datasheet Details

Part number:

DP170N03

Manufacturer:

Developer Microelectronics

File Size:

195.35 KB

Description:

N-channel mosfet.

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