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DP170N03 N-Channel MOSFET

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Description

General .
DP170N03 Single N Channel Enhancement Power MOSFET Product Summary DP170N03 uses advanced trench technology to provide excellent RDS(ON), low gate c.

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Applications

* VDS ID (at VGS=20V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 30 V 13A < 10.5mΩ < 12mΩ
* RoHS and Halogen-Free Complaint SOP-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol P-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ=

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DP170N03 N-Channel MOSFET Developer Microelectronics
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