Datasheet Details
- Part number
- DP170N03
- Manufacturer
- Developer Microelectronics
- File Size
- 195.35 KB
- Datasheet
- DP170N03-DeveloperMicroelectronics.pdf
- Description
- N-Channel MOSFET
DP170N03 Description
General .
DP170N03
Single N Channel Enhancement Power MOSFET
Product Summary
DP170N03 uses advanced trench technology to provide excellent RDS(ON), low gate c.
DP170N03 Applications
* VDS ID (at VGS=20V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V)
30 V 13A < 10.5mΩ < 12mΩ
* RoHS and Halogen-Free Complaint
SOP-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
P-Channel
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuous @ TJ=
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