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DTS2012 N-Channel MOSFET

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Description

N-Channel 20 V (D-S) MOSFET DTS2012 www.din-tek.jp PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.037 at VGS = 4.5 V 0.041 at VGS = 2.5 V 0.046 at VGS =.

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Datasheet Specifications

Part number
DTS2012
Manufacturer
Din-Tek
File Size
427.31 KB
Datasheet
DTS2012-DinTek.pdf
Description
N-Channel MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* Typical ESD Protection 2000 V HBM
* 100 % Rg Tested

Applications

* Portable Devices - Load Switch - Battery Switch
* Load Switch for Motors, Relays and Solenoids ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C)

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