Description
N-Channel 20-V (D-S) MOSFET DTS www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0095 at VGS = 10 V 20 0.0105 at VGS = 4.5 V ID (A.
Features
* Halogen-free According to IEC 61249-2-21
Definition
* TrenchFET® Gen III Power MOSFET
* 100 % Rg Tested
* 100 % UIS Tested
Applications
* DC/DC Conversion
* POL
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current
Maxi