2DB1386Q
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20v pnp medium power transistor.
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2DB1386R - 20V PNP MEDIUM POWER TRANSISTOR
(Diodes)
2DB1386Q/R
20V PNP MEDIUM POWER TRANSISTOR IN SOT89
Features
BVCEO > -20V IC = -5A high Continuous Current Low saturation voltage VCE(sat) < -1.
2DB1119S - PNP SURFACE MOUNT TRANSISTOR
(Diodes)
2DB1119S
PNP SURFACE MOUNT TRANSISTOR
NEW PRODUCT
Features
• Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • I.
2DB1132P - 32V PNP POWER SWITCHING TRANSISTOR
(Diodes)
2DB1132P/Q/R
32V PNP POWER SWITCHING TRANSISTOR IN SOT-89
Features
BVCEO > -32V IC = -1A high Continuous Collector Current Complementary NPN Ty.
2DB1132Q - 32V PNP POWER SWITCHING TRANSISTOR
(Diodes)
2DB1132P/Q/R
32V PNP POWER SWITCHING TRANSISTOR IN SOT-89
Features
BVCEO > -32V IC = -1A high Continuous Collector Current Complementary NPN Ty.
2DB1132R - 32V PNP POWER SWITCHING TRANSISTOR
(Diodes)
2DB1132P/Q/R
32V PNP POWER SWITCHING TRANSISTOR IN SOT-89
Features
BVCEO > -32V IC = -1A high Continuous Collector Current Complementary NPN Ty.
2DB1182Q - 32V PNP MEDIUM POWER TRANSISTOR
(Diodes)
Features
BVCEO > -32V IC = -2A High Continuous Collector Current ICM = -3A Peak Pulse Current Epitaxial Planar Die Construction Low Collecto.
2DB1184Q - 50V PNP MEDIUM POWER TRANSISTOR
(Diodes)
Features
• BVCEO > -50V • IC = -3A High Continuous Collector Current • ICM = -4.5A Peak Pulse Current • Epitaxial Planar Die Construction • Low Collec.
2DB1188P - 32V PNP MEDIUM POWER TRANSISTOR
(Diodes)
Features
BVCEO > -32V IC = -2A high Continuous Current Low saturation voltage VCE(sat) < 800mV @ 2A Complementary NPN Type: 2DD1766 Totally .
2DB1188Q - 32V PNP MEDIUM POWER TRANSISTOR
(Diodes)
Features
BVCEO > -32V IC = -2A high Continuous Current Low saturation voltage VCE(sat) < 800mV @ 2A Complementary NPN Type: 2DD1766 Totally .
2DB1188R - 32V PNP MEDIUM POWER TRANSISTOR
(Diodes)
Features
BVCEO > -32V IC = -2A high Continuous Current Low saturation voltage VCE(sat) < 800mV @ 2A Complementary NPN Type: 2DD1766 Totally .