2DB1689 Datasheet, Transistor, Diodes

2DB1689 Features

  • Transistor
  • Epitaxial Planar Die Construction
  • Low Collector-Emitter Saturation Voltage
  • Ideal for Low Power Amplification and Switching
  • Complementary NPN Type

PDF File Details

Part number:

2DB1689

Manufacturer:

DIODES ↗

File Size:

77.38kb

Download:

📄 Datasheet

Description:

Pnp surface mount transistor.

Datasheet Preview: 2DB1689 📥 Download PDF (77.38kb)
Page 2 of 2DB1689 Page 3 of 2DB1689

2DB1689 Application

  • Applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on o

TAGS

2DB1689
PNP
SURFACE
MOUNT
TRANSISTOR
Diodes

📁 Related Datasheet

2DB1694 - PNP SURFACE MOUNT TRANSISTOR (Diodes)
Features • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Voltage • Ideal for Low Power Amplification and Switching • Complement.

2DB1697 - PNP SURFACE MOUNT TRANSISTOR (Diodes)
NEW PRODUCT Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Ampl.

2DB1119S - PNP SURFACE MOUNT TRANSISTOR (Diodes)
2DB1119S PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • I.

2DB1132P - 32V PNP POWER SWITCHING TRANSISTOR (Diodes)
2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features  BVCEO > -32V  IC = -1A high Continuous Collector Current  Complementary NPN Ty.

2DB1132Q - 32V PNP POWER SWITCHING TRANSISTOR (Diodes)
2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features  BVCEO > -32V  IC = -1A high Continuous Collector Current  Complementary NPN Ty.

2DB1132R - 32V PNP POWER SWITCHING TRANSISTOR (Diodes)
2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features  BVCEO > -32V  IC = -1A high Continuous Collector Current  Complementary NPN Ty.

2DB1182Q - 32V PNP MEDIUM POWER TRANSISTOR (Diodes)
Features  BVCEO > -32V  IC = -2A High Continuous Collector Current  ICM = -3A Peak Pulse Current  Epitaxial Planar Die Construction  Low Collecto.

2DB1184Q - 50V PNP MEDIUM POWER TRANSISTOR (Diodes)
Features • BVCEO > -50V • IC = -3A High Continuous Collector Current • ICM = -4.5A Peak Pulse Current • Epitaxial Planar Die Construction • Low Collec.

2DB1188P - 32V PNP MEDIUM POWER TRANSISTOR (Diodes)
Features  BVCEO > -32V  IC = -2A high Continuous Current  Low saturation voltage VCE(sat) < 800mV @ 2A  Complementary NPN Type: 2DD1766  Totally .

2DB1188Q - 32V PNP MEDIUM POWER TRANSISTOR (Diodes)
Features  BVCEO > -32V  IC = -2A high Continuous Current  Low saturation voltage VCE(sat) < 800mV @ 2A  Complementary NPN Type: 2DD1766  Totally .

Stock and price

part
Diodes Incorporated
TRANS PNP 12V 1.5A SOT-323
DigiKey
2DB1689-7
0 In Stock
Qty : 150000 units
Unit Price : $0.04
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts