D12V0H1U2LP1610
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1 channel high surge tvs diode. This new generation TVS is designed to protect sensitive electronics from the damage due to ESD. The combination of small size and hi
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D12V0H1U2LP - 1 CHANNEL UNIDIRECTIONAL TVS
(Diodes)
ADVANACDEVDAINNCFEO IRNMFAOTIROMNATION
D12V0H1U2LP
1 CHANNEL UNIDIRECTIONAL TVS
Product Summary
Features
VBR Min 13.3V
IPP Max 13A
CT Typ 80pF
.
D12V0H1U2WS - 1 CHANNEL UNIDIRECTIONAL TVS
(Diodes)
NEW PRODUCT
Features
• 600 Watts Peak Pulse Power (tp = 8x20μs) • IEC 61000-4-2 (ESD): Air – 30kV, Contact – 30kV • IEC 61000-4-2 (ESD), HBM – 16kV •.
D12V0H2U3SO - DUAL ESD PROTECTION DIODES
(DIODES)
D12V0H2U3SO
DUAL ESD PROTECTION DIODES
Product Summary
VBR (min) 14.2
IPP (max) 12A
CT (typ) 78pF
Description
The DIODES™ D12V0H2U3SO is a dual v.
D12V0L1B2LP - LOW CAPACITANCE BIDIRECTIONAL TVS DIODE
(Diodes)
NAEDWVPARNOCDEUICNTF O R M A T I O N
D12V0L1B2LP
LOW CAPACITANCE BIDIRECTIONAL TVS DIODE
Product Summary
VBR (min) 13V
IPP (max) 4A
CT (typ) 10pF.
D12V0M1U2S9 - 12V UNIDIRECTIONAL TVS DIODE
(Diodes)
NEW PNREOWDUPCRTODUCT
D12V0M1U2S9
12V UNIDIRECTIONAL TVS DIODE
Product Summary
VBR min 13V
Ipp max 4A
Cin typ 20pF
Description
This new generati.
D1200 - NPN Silicon Transistor
(ROHM)
.
D12000W - Standard Recovery Diode
(nELL)
SEMICONDUCTOR
RRooHHSS
SEMICONDUCTOR
Fig.1 Maximuam forward voltage drop characteristics
D12000W Series RRooHHSS
Fig.2 Surge forward current vs pul.
D1201 - Rectifiers
(RCA)
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _~ File No.495
ffilCIBLJD
Solid State Division
Rectifiers D1201 Series
i-A, 50-to-i000-Y Sili.
D1201A - Rectifiers
(RCA)
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _~ File No.495
ffilCIBLJD
Solid State Division
Rectifiers D1201 Series
i-A, 50-to-i000-Y Sili.
D1201B - Rectifiers
(RCA)
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _~ File No.495
ffilCIBLJD
Solid State Division
Rectifiers D1201 Series
i-A, 50-to-i000-Y Sili.