D12V0M1U2S9
294.13kb
12v unidirectional tvs diode. This new generation TVS is designed to protect sensitive electronics from the damage due to ESD. The combination of small size and hi
TAGS
📁 Related Datasheet
D12V0H1U2LP - 1 CHANNEL UNIDIRECTIONAL TVS
(Diodes)
ADVANACDEVDAINNCFEO IRNMFAOTIROMNATION
D12V0H1U2LP
1 CHANNEL UNIDIRECTIONAL TVS
Product Summary
Features
VBR Min 13.3V
IPP Max 13A
CT Typ 80pF
.
D12V0H1U2LP1610 - 1 CHANNEL HIGH SURGE TVS DIODE
(Diodes)
Product Summary
VBR (Min) 13V
IPP (Max) 50A
CT (Typ) 350pF
Description
This new generation TVS is designed to protect sensitive electronics from t.
D12V0H1U2WS - 1 CHANNEL UNIDIRECTIONAL TVS
(Diodes)
NEW PRODUCT
Features
• 600 Watts Peak Pulse Power (tp = 8x20μs) • IEC 61000-4-2 (ESD): Air – 30kV, Contact – 30kV • IEC 61000-4-2 (ESD), HBM – 16kV •.
D12V0H2U3SO - DUAL ESD PROTECTION DIODES
(DIODES)
D12V0H2U3SO
DUAL ESD PROTECTION DIODES
Product Summary
VBR (min) 14.2
IPP (max) 12A
CT (typ) 78pF
Description
The DIODES™ D12V0H2U3SO is a dual v.
D12V0L1B2LP - LOW CAPACITANCE BIDIRECTIONAL TVS DIODE
(Diodes)
NAEDWVPARNOCDEUICNTF O R M A T I O N
D12V0L1B2LP
LOW CAPACITANCE BIDIRECTIONAL TVS DIODE
Product Summary
VBR (min) 13V
IPP (max) 4A
CT (typ) 10pF.
D1200 - NPN Silicon Transistor
(ROHM)
.
D12000W - Standard Recovery Diode
(nELL)
SEMICONDUCTOR
RRooHHSS
SEMICONDUCTOR
Fig.1 Maximuam forward voltage drop characteristics
D12000W Series RRooHHSS
Fig.2 Surge forward current vs pul.
D1201 - Rectifiers
(RCA)
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _~ File No.495
ffilCIBLJD
Solid State Division
Rectifiers D1201 Series
i-A, 50-to-i000-Y Sili.
D1201A - Rectifiers
(RCA)
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _~ File No.495
ffilCIBLJD
Solid State Division
Rectifiers D1201 Series
i-A, 50-to-i000-Y Sili.
D1201B - Rectifiers
(RCA)
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _~ File No.495
ffilCIBLJD
Solid State Division
Rectifiers D1201 Series
i-A, 50-to-i000-Y Sili.