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DGD2103M

HALF-BRIDGE GATE DRIVER

DGD2103M Features

* high pulse current buffers designed for minimum driver cross conduction. DGD2103M has a fixed internal deadtime of 420ns (typical). The DGD2103M is offered in the SO-8 (Type TH) package and operates over an extended -40°C to +125°C temperature range. DGD2103M HALF-BRIDGE GATE DRIVER IN SO-8 Feature

DGD2103M General Description

The DGD2103M is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques enable the DGD2103M’s high side to switch to 600V in a bootstrap operation. The DGD2103M logic inputs are compatible with standard.

DGD2103M Datasheet (822.53 KB)

Preview of DGD2103M PDF

Datasheet Details

Part number:

DGD2103M

Manufacturer:

DIODES ↗

File Size:

822.53 KB

Description:

Half-bridge gate driver.

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DGD2103M HALF-BRIDGE GATE DRIVER Diodes

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