Part number:
DGTD120T40S1PT
Manufacturer:
File Size:
1.03 MB
Description:
1200v field stop igbt.
DGTD120T40S1PT Datasheet (1.03 MB)
* High-Speed Switching & Low Power Loss
* VCE(sat) = 2.0V @ IC = 40A
* High Input Impedance
* trr = 100ns (typ) @ diF/dt = 200A/us
* Ultra Soft, Fast Recovery Anti-parallel Diode
* Ultra Narrowed VF Distribution Control
* Lead-Free Finish & RoHS Compliant (Notes 1 & 2)
DGTD120T40S1PT Datasheet (1.03 MB)
DGTD120T40S1PT
1.03 MB
1200v field stop igbt.
📁 Related Datasheet
DGTD120T25S1PT - 1200V FIELD STOP IGBT
(Diodes)
Description
The DGTD120T25S1PT is produced using advanced Field Stop Trench IGBT Technology, which provides low VCE(sat) , excellent quality and high-.
DGTD65T15H2TF - 650V FIELD STOP IGBT
(Diodes)
DGTD65T15H2TF
Green
650V FIELD STOP IGBT IN ITO220AB
Description
The DGTD65T15H2TF is produced using advanced Field Stop Trench IGBT Technology, whic.
DGTD65T40S2PT - 650V FIELD STOP IGBT
(Diodes)
Green DGTD65T40S2PT
650V FIELD STOP IGBT IN TO247 (Type MC)
Description
The DGTD65T40S2PT is produced using advanced Field Stop Trench IGBT Technolog.
DGTD65T50S1PT - FIELD STOP IGBT
(Diodes)
.
DGTD65T60S2PT - FIELD STOP IGBT
(Diodes)
Description
The DGTD65T60S2PT is produced using advanced Field Stop Trench IGBT 2nd Generation Technology, which not only gives high-switching efficie.
DGT304RE - Reverse Blocking Gate Turn-off Thyristor
(Dynex)
DGT304RE
DGT304RE
Reverse Blocking Gate Turn-off Thyristor
DS5518-2.1 February 2002
FEATURES
s s s s s s s
KEY PARAMETERS ITCM VDRM/VRRM IT(AV) dVD.
DGT304RE13 - Reverse Blocking Gate Turn-off Thyristor
(Dynex)
DGT304RE
DGT304RE
Reverse Blocking Gate Turn-off Thyristor
DS5518-2.1 February 2002
FEATURES
s s s s s s s
KEY PARAMETERS ITCM VDRM/VRRM IT(AV) dVD.
DGT304SE - Gate Turn-off Thyristor
(Dynex)
DGT304SE13
DGT304SE
Gate Turn-off Thyristor
Replaces January 2000 version, DS4609-4.0 DS4609-4.1 February 2002
APPLICATIONS
s Variable speed A.C. mo.
