DGTD65T60S2PT Datasheet (Diodes)

DGTD65T60S2PT, FIELD STOP IGBT

The DGTD65T60S2PT is produced using advanced Field Stop Trench IGBT 2nd Generation Technology, which not only gives high-switching efficiency, but is also extremely rugged and excellent quality for applications where low conduction losses are essential.

DGTD65T60S2PT 650V FIELD STOP IGBT IN TO-247

DGTD65T60S2PT Features

* High Speed Switching & Low Power Loss

* VCE(sat) = 1.85V @ IC = 60A

* High Input Impedance

* trr = 110ns (typ) @ diF/dt = 500A/µs

* Eoff = 0.53mJ @ TC=25°C

* Maximum Junction Temperature 175°C

* Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

* Halogen and Antimony F