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DGTD65T60S2PT

FIELD STOP IGBT

DGTD65T60S2PT Features

* High Speed Switching & Low Power Loss

* VCE(sat) = 1.85V @ IC = 60A

* High Input Impedance

* trr = 110ns (typ) @ diF/dt = 500A/µs

* Eoff = 0.53mJ @ TC=25°C

* Maximum Junction Temperature 175°C

* Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

* Halogen and Antimony F

DGTD65T60S2PT General Description

The DGTD65T60S2PT is produced using advanced Field Stop Trench IGBT 2nd Generation Technology, which not only gives high-switching efficiency, but is also extremely rugged and excellent quality for applications where low conduction losses are essential. DGTD65T60S2PT 650V FIELD STOP IGBT IN TO-247 .

DGTD65T60S2PT Datasheet (1.56 MB)

Preview of DGTD65T60S2PT PDF

Datasheet Details

Part number:

DGTD65T60S2PT

Manufacturer:

DIODES ↗

File Size:

1.56 MB

Description:

Field stop igbt.

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DGTD65T60S2PT FIELD STOP IGBT Diodes

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