DGTD65T60S2PT Datasheet, Igbt, Diodes

DGTD65T60S2PT Features

• Igbt
• High Speed Switching & Low Power Loss
• VCE(sat) = 1.85V @ IC = 60A
• High Input Impedance
• trr = 110ns (typ) @ diF/dt = 500A/µs
• Eoff = 0.53

PDF File Details

Part number:

DGTD65T60S2PT

Manufacturer:

DIODES ↗

File Size:

1.56MB

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📄 Datasheet

Description:

Field stop igbt. The DGTD65T60S2PT is produced using advanced Field Stop Trench IGBT 2nd Generation Technology, which not only gives high-switching ef

DGTD65T60S2PT Application

• Applications where low conduction losses are essential. DGTD65T60S2PT 650V FIELD STOP IGBT IN TO-247 Features
• High Speed Switching & Low

TAGS

DGTD65T60S2PT

Diodes

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