DGTD65T60S2PT FIELD STOP IGBT

Diodes

Description

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The DGTD65T60S2PT is produced using advanced Field Stop Trench IGBT 2nd Generation Technology, which not only gives high-switching efficiency, but is.

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Datasheet Specifications

Part number: DGTD65T60S2PT
Manufacturer: DIODES ↗
File Size: 1.56 MB
Datasheet: DGTD65T60S2PT-Diodes.pdf
Description: FIELD STOP IGBT

Features

* High Speed Switching & Low Power Loss
* VCE(sat) = 1.85V @ IC = 60A
* High Input Impedance
* trr = 110ns (typ) @ diF/dt = 500A/µs
* Eoff = 0.53mJ @ TC=25°C
* Maximum Junction Temperature 175°C
* Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony F

DGTD65T60S2PT Distributors

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DGTD65T60S2PT FIELD STOP IGBT Diodes

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