DGTD65T60S2PT - FIELD STOP IGBT

Diodes

DGTD65T60S2PT Datasheet Preview — Preview of DGTD65T60S2PT PDF

Datasheet Details

Part number	DGTD65T60S2PT
Manufacturer	DIODES ↗
File Size	1.56 MB
Description	FIELD STOP IGBT
Datasheet	DGTD65T60S2PT-Diodes.pdf

DGTD65T60S2PT Product details

Description

The DGTD65T60S2PT is produced using advanced Field Stop Trench IGBT 2nd Generation Technology, which not only gives high-switching efficiency, but is also extremely rugged and excellent quality for applications where low conduction losses are essential.

Features

High Speed Switching & Low Power Loss.
VCE(sat) = 1.85V @ IC = 60A.
High Input Impedance.
trr = 110ns (typ) @ diF/dt = 500A/µs.
Eoff = 0.53mJ @ TC=25°C.
Maximum Junction Temperature 175°C.
Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).

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Published: Apr 13, 2020 |