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DMN2022UNS DUAL N-CHANNEL MOSFET

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Description

NEW PRODUCT Product Summary V(BR)DSS 20V RDS(ON) max 10.8m @ VGS = 4.5V 14.5m @ VGS = 2.5V 17.0m @ VGS = 1.8V ID max TA = +25°C 10.7A 9.3A 8.6A.
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it i.

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Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Complementary Pair MOSFET
* ESD Protected Up to 2kV
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3) Mechanical

Applications

* Applications
* Power Management Functions

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