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DMN2028USS N-Channel MOSFET

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Description

ADVANCE INFORMATION Product Summary V(BR)DSS 20V RDS(on) max 20mΩ @ VGS= 4.5V 28mΩ @ VGS= 2.5V ID max TA = +25°C (Note 6) 9.8A 8.3A .
and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making i.

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Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Low Output Leakage
* ESD Protected Up to 2kV
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Standards for High R

Applications

* This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Battery charging
* Power management functions
* DC-DC converters
* Portable power adaptors

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