DMN2400UFD N-Channel MOSFET

Diodes

Description

NEW PRODUCT Product Summary BVDSS 20V RDS(ON) MAX 0.6Ω @ VGS = 4.5V 0.8Ω @ VGS = 2.5V 1.0Ω @ VGS = 1.8V 1.6Ω @ VGS = 1.5V NOT RECOMMENDED FOR NEW .
and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance,.

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Datasheet Specifications

Part number: DMN2400UFD
Manufacturer: DIODES ↗
File Size: 429.29 KB
Datasheet: DMN2400UFD-Diodes.pdf
Description: N-Channel MOSFET

Features

* ID MAX TA = +25°C 0.9A 0.7A 0.5A 0.3A
* Low On-Resistance
* Very low Gate Threshold Voltage, 1.0V Max
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device

Applications

* This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Power Management Functions
* Battery Operated Systems and Solid-State Relays
* Load S

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DMN2400UFD N-Channel MOSFET Diodes

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