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DMN2400UFDQ N-CHANNEL MOSFET

DMN2400UFDQ Description

DMN2400UFDQ N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INNEFWORPRMOADTIUOCNT Product Summary BVDSS 20V RDS(ON) 0.6Ω @ VGS = 4.5V 0.8Ω @ VGS = 2.5V.
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it idea.

DMN2400UFDQ Features

* Low On-Resistance
* Very low Gate Threshold Voltage, 1.0V Max.
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 s

DMN2400UFDQ Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
* Power Management Functions
* Battery Operated Systems and Solid-State Relays

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