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ADVANCE INFORMATION
Product Summary
BVDSS 40V
RDS(ON) max 20mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V
ID max TA = +25°C
8.0A
6.7A
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions
U-DFN2020-6 (Type E)
DMN4020LFDE
40V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• 0.6mm Profile – Ideal for Low Profile Applications • PCB Footprint of 4mm2 • Low Gate Threshold Voltage • Low On-Resistance • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free.