DMN100 Datasheet | Diodes Incorporated

SPICE MODELS: DMN100 Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features - - - - - - - Extremely Low On-Resistance: 170m W @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook puter, Portable Phone, PCMCIA Cards, and Battery Powered Circuits Lead Free By Design/Ro HS pliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability ESD Protected Gate "Green" Device (Note 3) E G D G H D TOP VIEW S B C A SC-59 Dim A B C D E G H Drain Min 0.30 1.40 2.50 0.85 0.30 1.70 2.70 ¾ 1.00 0.55 0.10 Max 0.50 1.80 3.00 1.05 0.70 2.10 3.10 0.10 1.40 0.70 0.35 Mechanical Data - - - - - - - - Case: SC-59 Case Material - Molded Plastic, "Green" Molding pound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: See Last Page Ordering & Date Code Information: See Last Page Weight: 0.008 grams (approximate) Gate Protection Diode Source Gate All Dimensions in mm ESD protected EQUIVALENT CIRCUIT Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation @ TA = 25°C unless otherwise specified Symbol VDSS Continuous Continuous Pulsed VGSS ID Pd Rq JA Tj, TSTG DMN100 30 ±20 1.1 4.0 500 250 -55 to +150 Units V V A m W K/W °C Characteristic Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. Pulse width £ 300ms, duty cycle £ 2%. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" Policy can be found on our website at http://.diodes./products/lead_free/index.php....